IRFP 4321

RFP4321PbF Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits Benefits l Low RDSON Reduces Losses l Low Gate Charge Improves the Switching Performance www.DataSheet4U.com l Improved Diode Recovery Improves Switching & EMI Performance l 30V Gate Voltage Rating Improves Robustness l Fully Characterized Avalanche SOA HEXFET® Power MOSFET VDSS RDS(on) typ. max. ID D 150V 12m: 15.5m: 78A D G S G D S TO-247AC D S G Gate Drain Source Absolute Maximum Ratings Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS (Thermally limited) TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current d Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy e Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Max. 78 c 55 330 310 2.0 ±30 210 -55 to + 175 300 10lbxin (1.1Nxm) Typ. ––– 0.24 ––– Max. 0.49 ––– 40 Units A W W/°C V mJ °C Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-Case g Case-to-Sink, Flat, Greased Surface Junction-to-Ambient g Units °C/W www.irf.com 1 6/23/06 IRFP4321PbF Static @ TJ = 25°C (unless otherwise specified) Symbol V(BR)DSS Parameter Drain-to-Source Breakdown Voltage Min. Typ. Max. Units 150 ––– ––– 3.0 ––– ––– ––– –.